ECSE 433 Physical Basis of Transistor Devices (4 credits)

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ECSE 433 Physical Basis of Transistor Devices (4 credits)

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Offered by: Electrical & Computer Engr (Faculty of Engineering)

Overview

Electrical Engineering : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models. Laboratory experiments.

Terms: This course is not scheduled for the 2016-2017 academic year.

Instructors: There are no professors associated with this course for the 2016-2017 academic year.

Prerequisite(s): ECSE 251, ECSE 331, and MIME 262
Restriction(s): Not open to students who have taken ECSE 432.
(3-4-5)

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ECSE 433 Physical Basis of Transistor Devices (4 credits)

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